WebDec 10, 2024 · A theoretical study of the local moment formation and of the magnetic hyperfine field at a non-magnetic s-p impurity, namely Cd, embedded in R Cd ( R = Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho and Er) compounds is reported. WebFeb 22, 2015 · ResponseFormat=WebMessageFormat.Json] In my controller to return back a simple poco I'm using a JsonResult as the return type, and creating the json with Json …
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WebAug 16, 2024 · Both undoped and Dy-doped CaS04 were grown in this study. Inductively coupled plasma spectroscopy analysis was used to measure unintentional impurity concentrations above 1 ppm in as-grown samples. The major impurities were found to be Sr (22 ppm), Mg (9 ppm), A1 (2 ppm), Ba (1 ppm), and Cu, Ti, Na, Zr, (trace). WebMay 29, 2024 · of dY impurities on impurity-ligand distances. Although dy ions involve one unpaired electron and thus exhibit a relatively simple electronic structure, it is difficult to observe them in a cubic environment because of the Jahn-Teller theorem [17]. Wing to this fact, the final local geometry reached hy a dY ion placed in an ‘initial’ bims interview form
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WebOct 1, 1990 · Apparently, only Dy impurity develops the appropriate SO 4--V Ca centres needed for observation of these peaks. The peak-3-related centres are shown to be quite different in behaviour from that of the structurally similar peak-1 - related SO 4--V Ca centres. These results emphasise the importance of Dy impurities in stabilising the TL … Web2:Dy phosphor with various Dy +3 con-centrations ranging from 0.1 to 2mol% after irradiating the samples to 5Gy dose from 60Co gamma source are shown in Fig. 3(a). As is shown, the TL intensity is maximum for 1mol% concentration of Dy impurity. The corresponding TL glow curves for different amounts of dysprosium are observed in Fig. … Webthe Dy atoms enter into the n-ZrNiSn structure occupy-ing only the positions of Zr atoms and generating the defects of the acceptor nature. Such an incorporation of impurity atoms in the crystal structure of the semicon-ductor is accompanied by the change in the degree of the semiconductor compensation and in its electron-transport characteristics. bims interview score